![]() ![]() Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from KR2004-18122 external-priority Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd Priority to US11/560,768 priority Critical patent/US7429505B2/en Publication of US20070077693A1 publication Critical patent/US20070077693A1/en Application granted granted Critical Publication of US7429505B2 publication Critical patent/US7429505B2/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee Samsung Electronics Co Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Hyeoung-Won Seo Woun-Suck Yang Du-Heon Song Jae-Man Yoon Current Assignee (The listed assignees may be inaccurate. ![]() Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Active Application number US11/560,768 Other versions US20070077693A1 Google Patents Method of fabricating fin field effect transistor using isotropic etching techniqueÄownload PDF Info Publication number US7429505B2 US7429505B2 US11/560,768 US56076806A US7429505B2 US 7429505 B2 US7429505 B2 US 7429505B2 US 56076806 A US56076806 A US 56076806A US 7429505 B2 US7429505 B2 US 7429505B2 Authority US United States Prior art keywords hard mask mask pattern forming layer fin Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US7429505B2 - Method of fabricating fin field effect transistor using isotropic etching technique US7429505B2 - Method of fabricating fin field effect transistor using isotropic etching technique ![]()
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